| 摘要 |
A nitride semiconductor device includes: a semiconductor substrate; a p-type semiconductor layer formed over the semiconductor substrate, made of a nitride semiconductor, and containing first impurities; and an insulating film contacting the p-type semiconductor layer and having an impurity region containing second impurities for trapping hydrogen. Since residual hydrogen in the p-type semiconductor layer is trapped in the impurity region, the hydrogen concentration in the impurity region is higher than that in the insulating film excluding the impurity region.
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