发明名称 BIDIRECTIONAL SWITCH MODULE
摘要 <P>PROBLEM TO BE SOLVED: To solve a problem that a known semiconductor module uses an insulating substrate and a wiring layer formed thereon, and it becomes a cost-up factor. <P>SOLUTION: A first semiconductor element having a junction electrode connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate serving as a thermal diffusion plate; and similarly, a second semiconductor element having a junction electrode connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate serving as a thermal diffusion plate. The junction electrode of the first semiconductor element is at the same potential as the first metal base plate; and, the junction electrode of the second semiconductor element is at the same potential as the second metal base plate. Then, the respective metal base plates and nonjunction electrodes of the respective semiconductor elements are respectively connected with thin metal wires to constitute the bidirectional switch circuit. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009117868(A) 申请公布日期 2009.05.28
申请号 JP20090039134 申请日期 2009.02.23
申请人 HITACHI LTD;RENESAS TECHNOLOGY CORP 发明人 OSAWA MICHITAKA;KANAZAWA TAKAMITSU
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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