| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing breakage of an interlayer insulating film and breakage of an electrode due to bonding while securing bonding strength, and improving electrical characteristics, and to provide a manufacturing method thereof. <P>SOLUTION: A semiconductor element 1 mounted on the semiconductor device is provided with an interlayer insulating film 12 having an extending section 121 which covers a gate electrode 116 and extends in a first direction, a connecting section 122 which connects, at fixed intervals in the first direction, the extending sections 121 adjacent to each other in a second direction, and an opening section 123 which has its opening shape defined by the extending section 121 and the connecting section 122 and exposes the main surface of a base region 112 and the main surface of an emitter region 113. <P>COPYRIGHT: (C)2009,JPO&INPIT |
