| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal wiring structure having low resistance and high reliability. SOLUTION: The wiring structure comprises an interlayer insulating film (4) formed on a lower layer wire (2), a connection port (5) formed in the interlayer insulating film (4), where the lower layer wire (2) is exposed, a plurality of carbon nanotubes (8) formed on the bottom of the connection port (5), wire metals (10, 11) embedded inside the connection port (5) to fill spaces among the plurality of carbon nanotubes (8), and an upper layer wire (15) formed on the upper part of the connection port (5). Between each of the plurality of carbon nanotubes (8) and the upper layer wire (15), Ti layers (9) are formed. COPYRIGHT: (C)2009,JPO&INPIT |
