发明名称 |
FILM FORMING DEVICE, AND SUBSTRATE TREATMENT METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a film forming device enabling to efficiently clean the inside of a treatment container where a film is formed with epitaxial growth, and to provide a substrate treatment method enabling to efficiently clean extra deposit due to the film formation by the epitaxial growth. SOLUTION: In the film forming device, material gas as a film forming material is supplied into the treatment container having a holding plate in an internal pressure reducing space for holding a treated substrate, and induction heating of the treating substrate with a coil forms a film on the treating substrate by the epitaxial growth, then cleaning gas is supplied into the treatment container and the cleaning gas is-plasma excited to clean the inside of the treatment container. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009117399(A) |
申请公布日期 |
2009.05.28 |
申请号 |
JP20060044430 |
申请日期 |
2006.02.21 |
申请人 |
TOKYO ELECTRON LTD;ROHM CO LTD;KYOTO UNIV |
发明人 |
KOBAYASHI HIROKATSU;MORIZAKI EISUKE;KANZAWA AKIRA;NAKAMURA TAKASHI;KAWAMOTO NORIAKI;AKEDA MASATOSHI;KIMOTO TSUNENOBU |
分类号 |
H01L21/205;C23C16/44;H01L21/304;H01L21/3065 |
主分类号 |
H01L21/205 |
代理机构 |
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主权项 |
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