发明名称 MANUFACTURING METHOD OF THIN-FILM GAS SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film gas sensor which surely degasses a thermally-insulated support layer, prevents a gas from being generated, when a gas selective combustion layer is burned and which prevents expansion and detachment. SOLUTION: The thin-film gas sensor includes a Si substrate 1 having through-holes; the thermally-insulated support layer 2 as a trilaminar structure of a thermally-oxidized layer 21, a CVD-SiN layer 22 and a CVD-SiO<SB>2</SB>layer 23; a heater layer 3; an electrically-insulated layer 4; a pair of sensitive electrode layers 51; a gas sensitive layer 52; and the gas selective combustion layer 53. The manufacturing method of the thin-film gas sensor includes an annealing process for annealing the thermally-insulated support layer 2 and removing a gas, having major component as H<SB>2</SB>gas contained in the CVD-SiN layer 22 and the CVD-SiO<SB>2</SB>layer 23, after the thermally-insulated support layer 2 is formed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009115578(A) 申请公布日期 2009.05.28
申请号 JP20070288176 申请日期 2007.11.06
申请人 FUJI ELECTRIC FA COMPONENTS & SYSTEMS CO LTD 发明人 KUNIHARA KENJI;MAEDA MASAHIKO;OKAMURA MAKOTO;SUZUKI TAKUYA
分类号 G01N27/12;H01L21/316;H01L21/318 主分类号 G01N27/12
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