| 摘要 |
An interconnect structure for a microelectronic device includes an electrically conductive material (130, 730, 930) adjacent to a metallization layer (120, 320, 920). The electrically conductive material has a base (131, 931) and a body (132, 932). The base is wider than the body. The base and the body form a single monolithic structure having no internal interface. The interconnect structure may be manufactured by providing a substrate (110, 310, 910) to which the metallization layer is applied, forming a sacrificial layer (410) adjacent to the metallization layer and a resist layer (510) adjacent to the sacrificial layer, patterning the resist layer to form an opening (610) (thereby removing a portion of the sacrificial layer), placing the electrically conductive material in the opening, and removing the resist layer, the sacrificial layer, and a portion of the metallization layer.
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