| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a security volatile storage device for reducing a time required for writing in a third memory bank by reducing a circuit scale. <P>SOLUTION: This security volatile storage device 1 for controlling erasure or write of a non-volatile storage NVRAM includes a second switch part SW2 for controlling write to a third memory bank SRAM3 of a corresponding address on the basis of the readout value of a first memory bank SRAM1, and for controlling erasure or rewrite of a sector of the non-volatile storage part NVRAM of the corresponding address on the basis of the readout value of the third memory bank SRAM 3 by controlling conduction of a write control signal to the third memory bank SRAM 3 according to the readout value of the first memory band SRAM1. The first memory bank SRAM1 and the third memory bank SRAM3 are simultaneously accessed (in the same cycle) with the same word line. <P>COPYRIGHT: (C)2009,JPO&INPIT |
