| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of increasing throughput by reciprocating a laser beam and surely suppressing the difference between crystallinity in a forward path and that in a backward path. <P>SOLUTION: The change of the optical characteristics of an irradiated area 61 irradiated with a laser beam and a not-irradiated area 62 in a substrate, the change of the intensity of transmission light or reflected light for instance is defined as contrast, that is ((optical characteristics of the irradiated area)-(optical characteristics of the not-irradiated area))/((optical characteristics of the irradiated area)+(optical characteristics of the not-irradiated area)). The contrast is measured for each of a first direction (forward path) and a second direction (backward path), and the irradiation power of the laser beam or the relative speed of the laser beam and the substrate is modulated so that the difference between the contrast in the first direction and the contrast in the second direction lies in a predetermined range. In a modified semiconductor film, the difference between crystallinity in the forward path and that in the backward path is surely suppressed, a TFT characteristic difference becomes small, and display unevenness of the display apparatus is suppressed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
