| 摘要 |
PROBLEM TO BE SOLVED: To necessitate no process such as stacking of a hard mask material, lithography and processing on nMOS side and pMOS side by separately making process using a hard mask. SOLUTION: After a silicide step, an oxide film 23 is selectively deposited on a polysilicon gate electrode 17 and a source/drain diffused layer 19 of an nMOS 15. The oxide film 23 is used as a mask after the next silicide step, and the polysilicon gate electrode 17 and the source/drain diffused layer 20 of a pMOS 16 are selectively subjected to silicide processing. COPYRIGHT: (C)2009,JPO&INPIT
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