发明名称 |
SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE |
摘要 |
A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.
|
申请公布号 |
US2009137076(A1) |
申请公布日期 |
2009.05.28 |
申请号 |
US20080263612 |
申请日期 |
2008.11.03 |
申请人 |
SONY CORPORATION |
发明人 |
WATANABE YOSHIAKI;NARUI HIRONOBU;KUROMIZU YUICHI;YAMAUCHI YOSHINORI;TANAKA YOSHIYUKI |
分类号 |
H01L21/26;H01L21/316;H01L21/338;H01L29/778;H01L29/812;H01S5/00;H01S5/042;H01S5/18;H01S5/183;H01S5/22 |
主分类号 |
H01L21/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|