发明名称 |
POLISHING SLURRY, METHOD OF PRODUCING SAME, AND METHOD OF POLISHING SUBSTRATE |
摘要 |
Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 mum or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
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申请公布号 |
US2009133336(A1) |
申请公布日期 |
2009.05.28 |
申请号 |
US20080333170 |
申请日期 |
2008.12.11 |
申请人 |
K.C. TECH CO., LTD.;IUCF-HYU |
发明人 |
KIM DAE HYEONG;HONG SEOK MIN;JEON JAE HYUN;PAIK UN GYU;PARK JEA GUN;KIM YONG KUK |
分类号 |
C09G1/02;C09K3/14 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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