| 摘要 |
<p>A field effect transistor (T) of the (quasi-)vertical type, which means that in the semiconductor body (10) of the transistor (T), a source (1) and a drain (3) are positioned (approximately) above each other and are separated from each other by the channel region (2), which is connected to a gate region (4), each one of said regions being connected to a connection conductor (6, 7, 11) joining a connection region (7, 8, 12). The connection regions (7, 8) of the source (1) and the gate (4) are situated on top of the semiconductor body (10). The semiconductor body (10) is provided with a through-hole (9) at least one wall of which is covered with a conductive layer (11), which is connected to the drain (3), and which forms the connection conductor (11) of the drain (3) and which is connected to the connection region (12) for the drain (3) situated on top of the semiconductor body (10). In this way, the transistor (T) is very well suited for surface mounting and is also very easy to manufacture. The through-hole (9) can be made by means of a cheap technique, such as laser cutting or sandblasting. Moreover, the transistor (T) is insensitive to the thickness of the channel region (2), which, in addition, may be comparatively thick. This simplifies the manufacture thereof and renders the transistor (T) suitable for both high power and high voltage applications. An additional advantage is that the transistor (T) can be manufactured without using a comparatively expensive epitaxial process.</p> |
