发明名称 EMBEDDED ELECTRODE LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEROF
摘要 An LED(light emitting diode) with a buried electrode is provided to reduce a fabricating cost and improve capabilities in a high current by fabricating a rear-emission LED having a structure similar to the LED of an ideal structure by a surface-emission LED fabricating method wherein the ideal structure is fabricated by attaching a second substrate and detaching a first substrate. An LED is composed of a substrate(101), a buried electrode(111), a first semiconductor layer(102), a light emitting layer(103) and a second semiconductor layer(104). A region where a first electrode(140) composed of a first bonding pad(131) and a first fine electrode(132) is to be disposed is etched to expose the buried electrode so that a first electrode is disposed. A transparent ohmic contact layer(121) is formed on the second semiconductor layer. A second electrode(150) composed of a second bonding pad(141) and a second fine electrode(142) is connected to the transparent ohmic contact layer. The region for forming an electrode is etched in a manner that a passivation layer is formed prior to formation of a semiconductor layer to prevent the buried electrode from being selectively etched, so that the semiconductor layer is selectively formed.
申请公布号 KR20090053878(A) 申请公布日期 2009.05.28
申请号 KR20080106357 申请日期 2008.10.29
申请人 GENELITE KOREA 发明人 KONG, MYUNG KUK
分类号 H01L33/36 主分类号 H01L33/36
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