发明名称 DETECTION CIRCUIT AND FOREIGN MATTER INSPECTION APPARATUS FOR SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a foreign matter inspection apparatus of a semiconductor wafer for accurately detecting a signal by variably controlling a detection circuit characteristic according to a condition of the detected signal. SOLUTION: This foreign matter inspection apparatus for the semiconductor wafer comprises a PMT 103 which detects reflection light, an amplifier 301 which amplifies a signal detected by the PMT 103 and in which response characteristics of amplification are controlled by a control signal, an A/D converter 302 which converts the signal amplified by the amplifier 301 into a predetermined code and outputs the code, a control circuit 303 which generates a control signal based on information of the semiconductor wafer 104 having a correlation with the reflection light, and a data processing circuit which detects a foreign matter on the semiconductor wafer 104 based on the code output from the A/D converter 302. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009115753(A) 申请公布日期 2009.05.28
申请号 JP20070292106 申请日期 2007.11.09
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MAKUUCHI MASAMI;ORIHASHI RITSURO;JINGU TAKAHIRO
分类号 G01N21/88;G01N21/956 主分类号 G01N21/88
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