| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which comprises a PoP structure of a vertical semiconductor element and does not use a bonding wire for connecting the semiconductor elements, and its manufacturing method. SOLUTION: The semiconductor device 100 includes the PoP structure in which a packaged High-side MOS 32 and a packaged Low-side MOS 28 are sequentially stacked on a circuit board 2. A first source electrode 39 of a High-side MOS 34 is connected to a second drain electrode 24 of a Low-side MOS 22 through two conductive plates 10d, 16c pinching solder 14. Each of conducting path groups 6a, 6b, 6c, 6d and 6e which is energized to electrode groups 39, 38 and 40 of the High-side MOS 34 and electrode groups 20, 26 and 24 of the Low-side MOS 22 penetrates a sealing resin 30 of a package at a low step to be connected to the circuit board 2. COPYRIGHT: (C)2009,JPO&INPIT |
