SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that has a constitution which is easy to manufacture and exhibits superior long-term reliability, while having a short peripheral voltage withstanding structure. SOLUTION: A peripheral voltage withstanding structure 31 includes an n-SiC layer 13, an nSiC layer 14 and a pSiC layer 15 that are provided successively on an n+SiC layer 12. A trench 32 is formed in the peripheral voltage-withstanding structure so that the trench passes through the pSiC layer 15 and the nSiC layer 14 and reaches the n-SiC layer 13. This trench is wider than a trench having a trench gate structure in an active region part 11. A p+SiC region 33 is provided along the bottom of the trench 32 so as to be located under the trench. A sidewall and the bottom of the trench 32 are covered by an oxide film 34, and an insulating film 35, having a total thickness not smaller than 1.1 μm. The oxide film and the insulating film absorb a large part of a voltage which is applied between a source and a drain. COPYRIGHT: (C)2009,JPO&INPIT