发明名称 Data Programming Circuits And Memory Programming Methods
摘要 A data programming circuit for storing a writing data into a memory cell is provided. The data programming circuit includes a control circuit and a current generating circuit. The control circuit generates a control signal according to the writing data. The current generating circuit provides a writing current to the memory cell to change a crystalline state of the memory cell. The writing current has a pulse width corresponding to the writing data, and the crystalline state corresponds to the writing data.
申请公布号 US2009135645(A1) 申请公布日期 2009.05.28
申请号 US20080275223 申请日期 2008.11.21
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;PROMOS TECHNOLOGIES INC.;WINBOND ELECTRONCS CORP. 发明人 SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA;LIN WEN-PIN
分类号 G11C7/00;G11C11/56 主分类号 G11C7/00
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