发明名称 |
Data Programming Circuits And Memory Programming Methods |
摘要 |
A data programming circuit for storing a writing data into a memory cell is provided. The data programming circuit includes a control circuit and a current generating circuit. The control circuit generates a control signal according to the writing data. The current generating circuit provides a writing current to the memory cell to change a crystalline state of the memory cell. The writing current has a pulse width corresponding to the writing data, and the crystalline state corresponds to the writing data.
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申请公布号 |
US2009135645(A1) |
申请公布日期 |
2009.05.28 |
申请号 |
US20080275223 |
申请日期 |
2008.11.21 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;PROMOS TECHNOLOGIES INC.;WINBOND ELECTRONCS CORP. |
发明人 |
SHEU SHYH-SHYUAN;LIN LIEH-CHIU;CHIANG PEI-CHIA;LIN WEN-PIN |
分类号 |
G11C7/00;G11C11/56 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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