发明名称 Magnetoresistive Element and Magnetic Random Access Memory
摘要 A magnetoresistive element includes a free layer a pinned layer; a nonmagnetic layer interposed between the free layer and the pinned layer; and two magnetic layers arranged adjacent to the free layer on an opposite side to the pinned layer. The free layer includes: a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer. Magnetization of the first magnetic layer and magnetization of the second magnetic layer are antiferromagnetically coupled. One of the two magnetic layers is in contact with one end of the free layer in a long-axis direction, and the other of the two magnetic layers is in contact with the other end of the free layer in the long-axis direction.
申请公布号 US2009135644(A1) 申请公布日期 2009.05.28
申请号 US20070224396 申请日期 2007.02.23
申请人 NEC CORPORATION 发明人 NEBASHI RYUSUKE;SUZUKI TETSUHIRO
分类号 G11C11/02;G11C11/14;G11C11/416;H01L29/82 主分类号 G11C11/02
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