A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.
申请公布号
WO2009039264(A3)
申请公布日期
2009.05.28
申请号
WO2008US76840
申请日期
2008.09.18
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;EROKHIN, YURI;SULLIVAN, PAUL;WALTHER, STEVEN, R.;NUNAN, PETER
发明人
EROKHIN, YURI;SULLIVAN, PAUL;WALTHER, STEVEN, R.;NUNAN, PETER