| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a data rewriting method of a memory for storing data as latest as possible even when data are destroyed. <P>SOLUTION: The rewrite area of a flash memory 13 is divided into a plurality of regions, and data rewrite is successively performed to a plurality of divided areas A to D, and the rewrite areas are changed at every rewrite. Data are stored in the plurality of divided areas A to D, and the past data are kept in the other areas while rewriting the data in the area most recently selected. Therefore, even when the data are destroyed due to power interruption during the rewrite of the newest data, it is possible to hold the past data in the area different from the area being rewritten. <P>COPYRIGHT: (C)2009,JPO&INPIT |
