| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a liquid resistant film by which a liquid resistant film with few defects is formed at a wetted part of a substrate. SOLUTION: In a metal oxide film forming process, a tantalum pentoxide film of a monolayer that is an ink resistant film 75 as a liquid resistant film is formed at a part of a first ink contacting part as the wetted part of a channel forming substrate 10 as the substrate by reaction of an oxygen radical and a penta-ethoxy-tantalum film formed at a part of the first ink contacting part of the channel forming substrate 10. Then, a tantalum pentoxide film of a monolayer that is an ink resistant film 75 as a liquid resistant film is formed at a part of a second ink contacting part as the wetted part of a sealing substrate 30 as the substrate by reaction of an oxygen radical and a penta-ethoxy-tantalum film formed at a part of the second ink contacting part of the sealing substrate 30. COPYRIGHT: (C)2009,JPO&INPIT
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