发明名称 REDUCED PRESSURE TYPE MICROWAVE PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a microwave plasma processing apparatus for uniform batch cleaning a substrate inserted in a magazine, a silicon wafer inserted in a quarts board, or the like in a short time period without any damage. SOLUTION: Microwaves introduced from a wave guide having right and left branches is transmitted to dielectric bodies facing right and left each other. Each of the dielectric bodies has a slot plate passed therethrough. The microwaves realize a high density stable plasma discharge by exciting a reaction gas supplied from a gas feed port made of an opening formed in a depressurized process chamber. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009117847(A) 申请公布日期 2009.05.28
申请号 JP20080291531 申请日期 2008.10.16
申请人 MORY ENGINEERING CO LTD 发明人 HATANAKA TOSHIHIKO
分类号 H01L21/304 主分类号 H01L21/304
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