发明名称 |
DECREASING THE ETCH RATE OF SILICON NITRIDE BY CARBON ADDITION |
摘要 |
Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.
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申请公布号 |
US2009137132(A1) |
申请公布日期 |
2009.05.28 |
申请号 |
US20090365669 |
申请日期 |
2009.02.04 |
申请人 |
BHATIA RITWIK;XIA LI-QUN;PETERSON CHAD;M SAAD HICHEM |
发明人 |
BHATIA RITWIK;XIA LI-QUN;PETERSON CHAD;M'SAAD HICHEM |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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