发明名称 |
Tellurium Precursors for GST Films in an ALD or CVD Process |
摘要 |
The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.
|
申请公布号 |
US2009137100(A1) |
申请公布日期 |
2009.05.28 |
申请号 |
US20080272886 |
申请日期 |
2008.11.18 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
XIAO MANCHAO;YANG LIU;GAFFNEY THOMAS RICHARD |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|