发明名称 Image sensor with a gated storage node linked to transfer gate
摘要 A CMOS imaging system with increased charge storage of pixels yet decreased physical size, kTC noise and active area. A storage node is connected to the transfer gate and provides a storage node for a pixel, allowing for kTC noise reduction prior to readout. The pixel may be operated with the shutter gate on during the integration period to increase the amount of time for charge storage by a pixel.
申请公布号 US2009135284(A1) 申请公布日期 2009.05.28
申请号 US20080232994 申请日期 2008.09.26
申请人 ALTICE JR PETER P;MCKEE JEFFREY A 发明人 ALTICE, JR. PETER P.;MCKEE JEFFREY A.
分类号 H04N3/14;H04N3/15;H04N5/335 主分类号 H04N3/14
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