MOS TRANSISTORS HAVING NIPTSI CONTACT LAYERS AND METHODS FOR FABRICATING THE SAME

摘要

MOS transistors (100) and methods for fabricating MOS transistors are provided. One exemplary method comprises providing a silicon substrate (104) having an impurity-doped surface. A first layer (136) is sputter-deposited overlying the impurity-doped surface using a first sputtering target (132) comprising nickel and a first concentration of platinum. Nickel and a second concentration of platinum are sputter-deposited onto the first layer using a second sputtering target (142). The second concentration of platinum is less than the first.