| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an antifuse element capable of recording more than two values of information. <P>SOLUTION: The antifuse element has: a plurality of MOS transistors; a first electrode to which source electrodes of the plurality of MOS transistors are connected in common; a second electrode to which gate electrodes of the plurality of MOS transistors are connected in common; a third electrode to which at least one of drain electrodes of the plurality of MOS transistors can be connected; and an insulation film formed between the drain electrodes and the third electrode. The antifuse element has a constitution in which at least one position corresponding to the drain electrode in the insulation film is insulation-broken, thereby making the drain electrode corresponding to the insulation-broken region conductive with the third electrode. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
