| 摘要 |
The present invention relates to treatments for atom probe components. For example, certain aspects are directed toward processes for treating an atom probe component that includes removing material from a surface of the atom probe component (e.g., using an ion beam, a plasma, a chemical etching process, and/or photonic energy). Another aspect of the invention is directed toward a method for treating an atom probe specimen that includes using a computing device to automatically control a voltage used in an ion sputtering process. Still other aspects of the invention are directed toward methods for treating an atom probe component that includes introducing photonic energy proximate to a surface of the atom probe component, annealing at least a portion of a surface of the atom probe component, coating at least a portion of a surface of the atom probe component, and/or cooling at least a portion of the atom probe component.
|
