发明名称 METHOD OF FORMING A SPACER
摘要 A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.
申请公布号 US2009137126(A1) 申请公布日期 2009.05.28
申请号 US20080277332 申请日期 2008.11.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM YU-KYUNG;LEE KUN-TACK;SHIM WOO-GWAN;HONG CHANG-KI
分类号 H01L21/311 主分类号 H01L21/311
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