SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device in which a memory cell and a Schottky barrier diode are loaded together on the same semiconductor substrate and current loss by a parasitic bipolar transistor formed of a guard ring layer of the Schottky barrier diode is suppressed. SOLUTION: On the semiconductor substrate 1 of a first conductivity type, a memory cell region for forming the memory cell and a Schottky barrier diode region for forming the Schottky barrier diode are provided separately from each other. An impurity diffusion layer 5 of the first conductivity type formed in the channel region of a transistor for adjusting the threshold voltage of the transistor constituting the memory cell by an impurity concentration and the guard ring layer 6 formed of the impurity diffusion layer of the first conductivity type around the surface of an impurity diffusion layer 4 of a second conductivity type different from the first conductivity type forming the Schottky barrier of the Schottky barrier diode are the impurity diffusion layers formed simultaneously in the same process. COPYRIGHT: (C)2009,JPO&INPIT