| 摘要 |
FIELD: electrical engineering. ^ SUBSTANCE: proposed method of making contacts of a photoconverter involves depositing onto a semiconductor plate, a layer of rear contact metal plating and depositing a rear contact through electrochemical deposition of silver. A masking photoresist is made with an image of front contacts of the photoconverter. The photoresist is removed and a layer of front metal coating is deposited. A masking photoresist is made with an enlarged image of front contacts of the photoconverter. Front contacts are deposited by electrochemical deposition of silver. The plate undergoes thermal processin. After depositing a layer of rear contact metal plating, a masking photoresist is made with images of front contacts and outer auxiliary frames. A layer of front contact metal plating is then deposited. After removal of the photoresist, the plate undergoes thermal processing. After making a masking photoresist with an enlarged image of front contacts of the photoconverter, front and rear contacts are deposited separately in pulse mode with the plates lying horizontally above the surface of the electrolyte. After depositing silver, a protective layer of gold is deposited. ^ EFFECT: improved quality of electrochemically deposited contacts of a photoconverter and simplification of the process flow. ^ 1 dwg |
