METHOD OF MAKING CHEMICALLY DEPOSITED LEAD SELENIDE FILMS SENSITIVE TO INFRARED RADIATION

摘要

FIELD: electrical engineering. ^ SUBSTANCE: present invention relates to obtaining semiconductor materials, particularly to photosensitive lead selenide films, used for making infrared photodetectors in the 1-5 mcm range. The method of making chemically deposited lead selenide films sensitive to infrared radiation involves heating the films in atmospheric air in a sealed container. Thermal treatment is done at ratio of volume of the container to the surface area of the treated film equal to 20-40. Heating is done in the presence of selenium powder. ^ EFFECT: design of a method of making chemically deposited PbSe films sensitive to infrared radiation, providing for maximum values of voltage sensitivity and detectivity for use without cooling or light cooling. ^ 3 tbl