LASER THERMAL ANNEALING OF LIGHTLY DOPED SILICON SUBSTRATES,申请号KR20067006066-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	LASER THERMAL ANNEALING OF LIGHTLY DOPED SILICON SUBSTRATES
摘要
申请公布号	KR100899321(B1)	申请公布日期	2009.05.27
申请号	KR20067006066	申请日期	2006.03.28
申请人		发明人
分类号	H01L21/26	主分类号	H01L21/26
代理机构		代理人
主权项
地址

您可能感兴趣的专利

PROCESS FOR PRODUCING ALCOHOL

Guitar with neck truss rod supporting construction

Organic photosensitive member comprising a binder resin and a solvent

Processes for cleaning psyllium seeds

Process of making bicomponent acrylic fibers having reversible crimp

Water-reducible coating removers containing n-methyl-2-pyrrolidone

Method of treating schistosomal infestations by iontophoresis

SOLID, PARTICULATE FABRIC SOFTENER WITH PROTECTED, DRYER-ACTIVATED, CYCLODEXTRIN/PERFUME COMPLEX

Patient-controlled analgesia device

System and process for recycling aqueous cleaners

Scaler with improved vibration characteristics

Centrifugal oil pump booster

Food waste mixing and heat treating vehicle, hog lot and method of raising and feeding hogs

Plastic ball valve stem seal

Retractor with clamping mechanism

Sprinkler and edging apparatus

Article carrier