发明名称 |
Electron beam writing equipment and method |
摘要 |
<p>There is provided an electron beam writing technique which can correct deflection for a micro field used in electron beam writing equipment with high precision.</p><p>Electron beam writing equipment has an electron source; an electron optics system irradiating for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds and an objective lens to form a desired pattern on the sample; a stage mounting the sample; a mark for beam correction provided on the stage; an electron detector detecting a backscattered electron, a secondary electron or a transmission electron obtained by irradiation of the electron beam; a function moving the electron beam by high speed scanning with the deflection means to repeat formation of a patterned beam; a function moving the electron beam on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition; and a function detecting a backscattered electron or a secondary electron emitted from the mark for beam correction and near it by the low speed scanning or a transmission electron transmitted through the mark for beam correction to correct the position or the deflection distance of the electron beam or blanking time from the detected result.
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申请公布号 |
EP1435640(A3) |
申请公布日期 |
2009.05.27 |
申请号 |
EP20030017075 |
申请日期 |
2003.07.28 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION;CANON KABUSHIKI KAISHA |
发明人 |
SOHDA, YASUNARI;OHTA, HIROYA;KAMIMURA, OSAMU;GOTOH, SUSUMU |
分类号 |
G03F7/20;H01J37/317;G01Q30/02;H01J37/147;H01J37/304;H01J37/305;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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