| 摘要 |
This invention discloses a semiconductor device including a first buffer MOSFET of a first conductivity type, a second buffer MOSFET of a second conductivity type, an ESD protection circuit, an external input terminal, and a control circuit. The external input terminal capacitively couples to a terminal to which a second potential is applied, and receives the first potential or second potential in a normal operation mode. The control circuit includes a prebuffer which controls the gates of the first and second buffer MOSFETs on the basis of the potential of the external input terminal in the normal operation mode and fixes the external input terminal to the second or first potential by capacitive coupling upon ESD surge application, thereby fixing the gate of the second buffer MOSFET to the second or first potential and turning off the second buffer MOSFET.
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