发明名称 |
Data storage apparatus using current switching in metal oxide layer |
摘要 |
Provided is a data storage apparatus using current switching in a metal oxide layer. The data storage apparatus includes a substrate; a lower electrode layer disposed on the substrate; a metal oxide layer disposed on the lower electrode layer; a probe tip disposed on the metal oxide layer opposite the lower electrode layer and for scanning a local region of the metal oxide layer in units of nanometer, wherein the probe tip applies a write voltage to the local region of the metal oxide layer so that the resistance of the local region is sharply changed until a resistive state of the local region is switched from a first state to a second state or measures current flowing through the local region according to the resistive state and reads data stored in the local region; a driver for transferring the position of the probe tip to the local region of the metal oxide layer; and a controller for controlling the probe tip and the driver.
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申请公布号 |
US7539119(B2) |
申请公布日期 |
2009.05.26 |
申请号 |
US20050296935 |
申请日期 |
2005.12.07 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
PARK JONG HYURK;LEE SEONG JAE |
分类号 |
G11B7/00 |
主分类号 |
G11B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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