发明名称 Solid state imaging device and method for manufacturing solid state imaging device
摘要 A solid state imaging device and a method for manufacturing the same that prevents the reproduction characteristic of an optical image from being affected by diagonal light on a semiconductor substrate surface. A CCD image sensor includes a semiconductor substrate, light receiving pixels formed on the semiconductor substrate, and a color filter arranged above the light receiving pixels and including filters transmitting light having different wavelengths. Dummy wires, which shield light that passes through the color filter and which are electrically isolated from clock wires, are arranged at locations corresponding to boundaries of regions, each defining one of the light receiving pixels.
申请公布号 US7537957(B2) 申请公布日期 2009.05.26
申请号 US20070754885 申请日期 2007.05.29
申请人 SANYO ELECTRIC CO., LTD. 发明人 NISHIMURA HIDETAKA;OGO TAKAHIKO
分类号 H01L21/00;H01L27/146;H01L27/148;H04N5/335 主分类号 H01L21/00
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