发明名称 |
Memory device with capacitor and diode |
摘要 |
One embodiment of the present invention relates to an integrated circuit that includes a memory cell. The memory cell includes a capacitor configured to store a charge or voltage. The capacitor includes a first semiconductor fin having a first conductivity type and overlying a semiconductor body, a dielectric overlying at least part of the semiconductor fin, and a gate electrode overlying the dielectric. The memory cell also includes a diode. The diode includes an end portion of the first semiconductor fin and a second semiconductor fin that forms a junction with the end portion of the first semiconductor fin. The second semiconductor fin has a second conductivity type and includes first and second legs in different directions from the junction. Other devices and methods are also disclosed.
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申请公布号 |
US7539044(B1) |
申请公布日期 |
2009.05.26 |
申请号 |
US20070961064 |
申请日期 |
2007.12.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TIGELAAR HOWARD LEE;MARSHALL ANDREW |
分类号 |
G11C11/24;G11C11/36 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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