发明名称 Method of manufacturing nano size-gap electrode device
摘要 Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
申请公布号 US7537883(B2) 申请公布日期 2009.05.26
申请号 US20060447820 申请日期 2006.06.06
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 YU HAN YOUNG;BAEK IN BOK;AHN CHANG GEUN;IM KI JU;YANG JONG HEON;PI UNG HWAN;RYU MIN KI;PARK CHAN WOO;CHOI SUNG YOOL;LEE SEONG JAE
分类号 G03F7/00;C25D5/18;H01L51/40 主分类号 G03F7/00
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