发明名称 |
Method of manufacturing nano size-gap electrode device |
摘要 |
Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
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申请公布号 |
US7537883(B2) |
申请公布日期 |
2009.05.26 |
申请号 |
US20060447820 |
申请日期 |
2006.06.06 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
YU HAN YOUNG;BAEK IN BOK;AHN CHANG GEUN;IM KI JU;YANG JONG HEON;PI UNG HWAN;RYU MIN KI;PARK CHAN WOO;CHOI SUNG YOOL;LEE SEONG JAE |
分类号 |
G03F7/00;C25D5/18;H01L51/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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