发明名称 Semiconductor device with signal line having decreased characteristic impedance
摘要 A semiconductor device includes a semiconductor chip, electrodes pads, first and second insulating layers, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The first insulating layer is formed on the first and second areas of the semiconductor chip and exposes the electrode pads. The first conductive pattern transfers a signal and is formed on the first insulating layer. A second insulating layer is formed on the first conductive pattern and the first insulating layer. The second conductive pattern is formed on the second insulating layer and provides a ground potential. The external terminals are formed on the first and second patterns at the second area.
申请公布号 US7538417(B2) 申请公布日期 2009.05.26
申请号 US20070785708 申请日期 2007.04.19
申请人 OKI SEMICONDUCTOR CO., LTD. 发明人 ANZAI NORITAKA
分类号 H01L23/48;H01L23/52;H01L21/3205;H01L23/12;H01L23/31;H01L23/485;H01L23/50;H01L23/64 主分类号 H01L23/48
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