| 摘要 |
A sensor for detecting ionizing radiation such as X-rays or electrons in an imaging detector, with a germanium substrate 12 and top and bottom silicon layers 14,16. The silicon layers may be passivated. The bulk of absorption takes place in the germanium. Anode and cathode electrodes 44, 46 may be provided alternately to laterally bias the substrate. Alternatively, the silicon layers may be doped to vertically bias the substrate.
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