发明名称 |
Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufactured by thereof and image input and/or output apparatus having the same |
摘要 |
A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based substrate; forming a polysilicon having a predetermined depth at one or more predetermined regions of a surface of the substrate in order to form a microdefect flection pattern having a desired microcavity length; oxidizing the surface of the substrate where the polysilicon is formed for forming a silicon oxidation layer on the substrate and forming a microdefect flection pattern having a desired microcavity length at an interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by a difference between an oxidation rate of the polysilicon and an oxidation rate of a material of the substrate during formation of the silicon oxidation layer; exposing the microdefect flection pattern by etching a region of the silicon oxidation layer where the polysilicon is formed; and forming a doping region by doping the exposed microdefect flection pattern in a type opposite to a type of the substrate.
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申请公布号 |
US7537956(B2) |
申请公布日期 |
2009.05.26 |
申请号 |
US20050285192 |
申请日期 |
2005.11.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG IN-JAE;CHOI BYOUNG-LYONG |
分类号 |
H01L21/00;H01L33/34 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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