| 摘要 |
<p>A method for manufacturing a semiconductor device (10, 40) has preparation step of preparing a semiconductor substrate having a plurality of semiconductor chip formation regions and a scribe region (B) arranged between the plurality of the semiconductor chip formation regions and including a substrate cutting position (C), a semiconductor chip formation step of forming semiconductor chips having electrode pads (23) on the plurality of semiconductor chip formation regions, a first insulation layer formation step of forming a first insulation layer (13) on the semiconductor chips and the scribe region of the semiconductor substrate, a second insulation layer formation step of forming a second insulation layer (16) on the first insulation layer except for a region corresponding to the substrate cutting position, and a cutting step of cutting the semiconductor substrate at the substrate cutting position.</p> |
