REDUCTION OF AIR POCKETS IN SILICON CRYSTALS BY AVOIDING THE INTRODUCTION OF NEARLY INSOLUBLE GASES INTO THE MELT
摘要
<p>A process is provided for controlling the amount of insoluble gas carried by a charge of granular polycrystalline silicon. The process comprises (i) charging a feeding container with granular polycrystalline silicon, (ii) forming an ambient atmosphere in the feeding container, the ambient atmosphere having a mole fraction of at least 0.9 of a gas having a solubility in molten silicon of at least about 5x1013 atoms/cm3 at a temperature near the melting point of silicon and at a pressure of about 1 bar (about 100 kPa), and (iii) reducing the pressure inside the charged feeding container.</p>
申请公布号
WO2009064674(A1)
申请公布日期
2009.05.22
申请号
WO2008US82838
申请日期
2008.11.07
申请人
MEMC ELECTRONIC MATERIALS, INC.;KORB, HAROLD, W.;PHILLIPS, RICHARD