发明名称 PATTERN FORMING METHOD, PATTERN OR MOLD FORMED THEREBY
摘要 A pattern forming method includes a step of forming a pattern of a resist on a surface of a thin film formed on the base material; a step of forming a reverse layer on the pattern of the resist; a step of forming a reverse pattern, of the reverse layer complementary to the pattern of the resist by removing the resist after removing the reverse layer to expose a surface of the resist is exposed; a step of forming a hard mask layer including the thin film, on which the reverse layer is formed, by etching the thin film through the reverse pattern of the reverse layer as a mask; and a step of etching the base material through, as a mask, the hard mask layer on which the reverse layer remains or the hard mask layer on which the reverse layer has been removed.
申请公布号 WO2008146869(A3) 申请公布日期 2009.05.22
申请号 WO2008JP59862 申请日期 2008.05.22
申请人 CANON KABUSHIKI KAISHA;TERASAKI, ATSUNORI;SEKI, JUNICHI 发明人 TERASAKI, ATSUNORI;SEKI, JUNICHI
分类号 G03F7/00;B29C33/38;B29C59/02;G03F7/20;G03F7/40;H01L21/027 主分类号 G03F7/00
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