CIRCUIT AND METHOD FOR READING A TOGGLE MEMORY CELL

摘要

A MRAM toggle type memory cell is read by first providing a first signal representative of the initial state to a sense amplifier (1300, 1500). A resistance of the cell is temporarily changed by altering a magnetic polarization of the free layer of the cell. A second signal responsive to altering the resistance of the MRAM cell is provided to the sense amplifier (1300, 1500). The first signal is compared to the second signal to determine the state of the MRAM cell.