<p>The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber.</p>
申请公布号
WO2009065016(A1)
申请公布日期
2009.05.22
申请号
WO2008US83598
申请日期
2008.11.14
申请人
APPLIED MATERIALS, INC.;WHITE, JOHN M.;STIMSON, BRADLEY O.;KUDELA, JOZEF