| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming patterns on a substrate. <P>SOLUTION: The pattern forming method includes: a process for forming at least an organic lower layer film, a first silicon-containing film and a resist film on the substrate, and forming a first resist pattern by an exposure phenomenon; a process for forming a second silicon-containing film and a second resist film on the pattern, and forming a second resist pattern by the exposure phenomenon; a process for etching the second silicon-containing film by dry etching using the pattern as a mask, etching the first silicon-containing film by using the exposed first pattern as a mask, transferring a pattern as a combination of the first and second resist patterns to the first and second silicon-containing films, and forming a silicon-containing film pattern; a process for transferring a pattern to the organic lower layer film by dry etching using the pattern as a mask, and forming an organic lower layer film pattern; and a process for processing the substrate by dry etching using the pattern as a mask. <P>COPYRIGHT: (C)2009,JPO&INPIT |
