| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode structure wherein external quantum efficiency and internal quantum efficiency are both improved. <P>SOLUTION: A substrate is placed inside a solution and made to react, and a chemical reaction layer is formed on the surface. Thereafter, the substrate is etched and a plurality of recesses and protrusions with the chemical reaction layer at the upper part are formed on the surface of the substrate. Further, the chemical reaction layer is removed, an irregular geometric shape having the recess and the protrusion is formed on the surface of the substrate, and a semiconductor light emitting structure is epitaxially grown on the surface of the substrate finally. <P>COPYRIGHT: (C)2009,JPO&INPIT |
